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Datasheet File OCR Text: |
PROCESS Switching Diode CPD63 Central TM High Speed Switching Diode Chip Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Anode Bonding pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 11 x 11 MILS 11 MILS 3.3 x 3.3 MILS Al - 30,000A Au - 18,000A GEOMETRY GROSS DIE PER 4 INCH WAFER 94,130 PRINCIPAL DEVICE TYPES CMPD914 CMPD4448 1N914 1N914B 1N4148 1N4448 1N4154 1N4454 BACKSIDE CATHODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1-August 2002) Central TM PROCESS CPD63 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1-August 2002) |
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